IONIZING RADIATION EFFECTS IN MOS OXIDES(INTERNATIONAL SERIES ON ADVANCES IN SOLID STATE ELECTRONICS AND TECHNOLOGY)

物理学史

原   价:
771.00
售   价:
578.00
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平台大促 低至8折优惠
发货周期:预计3-5周发货
作      者
出  版 社
出版时间
2000年01月26日
装      帧
精装
ISBN
9789810233266
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页      码
188
语      种
英文
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图书简介
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by expo
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